kingers Posted May 27 Report Share Posted May 27 Undergraduate Course On Semiconductor Device Physics-Ii Last updated 3/2022 MP4 | Video: h264, 1280x720 | Audio: AAC, 44.1 KHz Language: English | Size: 12.53 GB | Duration: 9h 31mQuantitative & Qualitative analysis of MOS capacitor, MOSFET and BJT What you'll learn MOS Capacitor quantitative analysis MOSFET quantitative and Qualitative treatment BJT analysis Mathematical understanding Requirements My previous course- "Undergraduate course on semiconductor device physics-II" Description This is an undergraduate course on semiconductor device physics. This course is the second part in a series of two courses on semiconductor device physics.For any electronics student understanding transport phenomena of charge carriers, drift current, diffusion current, energy band theory of semiconductors, electron hole pairs(EHPs), Junction formation in a diode, extending the device physics to three terminal devices like BJT and MOSFET is necessary. My previous course "undergraduate course on semiconductor device physics-I" is a prerequisite for complete understanding of this course.Metal-Oxide-Semiconductor combination forms a capacitor and that capacitive action is to be understood well in terms of threshold voltage, CV characteristics. Though our major focus is on ideal MOS capacitor, non-idealities are also discussed up to some extent.Based on the knowledge of MOS capacitor, if we look at the transport of charge carriers in a three terminal device MOSFET it gives a complete picture of all MOSFET transistor structures namely, enhancement MOSFET & depletion MOSFET in both p-type and n-type substrates. A MOSFET is explained up to threshold control.Another transistor is Bipolar junction transistor(BJT). BJT characteristics and device parameters are explained with respect to input and output characteristics.About Author:Mr. Udaya Bhaskar is an undergraduate university level faculty and GATE teaching faculty with more than 15 years of teaching experience. His areas of interest are semiconductors, electronic devices, signal processing, digital design and other fundamental subjects of electronics. He trained thousands of students for GATE and ESE examinations. Overview Section 1: MOS Capacitor Lecture 1 Lesson-01 MOS Introduction Lecture 2 Lesson-02 Energy band theory of MOS- Flat band condition Lecture 3 Lesson-03 Work function difference & Electron affinity Lecture 4 Lesson-04 Accumulation mode in energy bands Lecture 5 Lesson-05 Depletion mode in energy bands Lecture 6 Lesson-06 Inversion mode in energy bands Lecture 7 Lesson-07 Inversion mode in energy band structure Lecture 8 Lesson-08 Surface potential Lecture 9 Lesson-09 On set of strong inversion Lecture 10 Lesson-10 Surface potential-Summary Lecture 11 Lesson-11 Maximum depletion width- Mathematical analysis Lecture 12 Lesson-12 Ideal MOS curves- Charge density Lecture 13 Lesson-13 Ideal MOS curves- Field intensity & Potential Lecture 14 Lesson-14 MOS C-V characteristic curve-I Lecture 15 Lesson-15 MOS C-V characteristic curve-II Lecture 16 Lesson-16 MOS capacitor with n-substrate Lecture 17 Lesson-17 Solved Example-01 Lecture 18 Lesson-18 Solved Example-02 Lecture 19 Lesson-19 Threshold voltage & Inversion charge Lecture 20 Lesson-20 Non ideal conditions in MOS capacitor Lecture 21 Lesson-21 Non zero work function difference Lecture 22 Lesson-22 Oxide charges & Interface traps Lecture 23 Lesson-23 Threshold voltage under non ideal conditions Lecture 24 Lesson-24 Solved example-03 Lecture 25 Lesson-25 Solved example-04 Section 2: MOSFET Lecture 26 Lesson-01 MOSFET- basic structure Lecture 27 Lesson-02 Induced channel & Implanted channel Lecture 28 Lesson-03 Threshold voltage for a MOSFET Lecture 29 Lesson-04 MOSFET 3-D structure Lecture 30 Lesson-05 MOSFET operation in linear region Lecture 31 Lesson-06 MOSFET operation in saturation region Lecture 32 Lesson-07 n-MOSFET characteristics Lecture 33 Lesson-08 p-MOSFET characteristics Lecture 34 Lesson-09 MOSFET current equation-I(derivation) Lecture 35 Lesson-10 MOSFET current equation-II(derivation) Lecture 36 Lesson-11 Output conductance & Transconductance Lecture 37 Lesson-12 Channel length modulation Lecture 38 Lesson-13 Threshold voltage Lecture 39 Lesson-14 Threshold tailoring implant Lecture 40 Lesson-15 Body bias effect Lecture 41 Lesson-16 Oxide layer thickness Section 3: Bipolar Junction Transistor(BJT) Lecture 42 Lesson-01 BJT Introduction Lecture 43 Lesson-02 BJT Basic operation Lecture 44 Lesson-03 BJT Operation(Contd..) Lecture 45 Lesson-04 BJT Operating regions Lecture 46 Lesson-05 BJT Under thermal equilibrium Lecture 47 Lesson-06 BJT in forward active region Lecture 48 Lesson-07 BJT current components Lecture 49 Lesson-08 BJT Common base current gain Lecture 50 Lesson-09 solved example-01 Lecture 51 Lesson-10 Minority carrier distribution in BJT Lecture 52 Lesson-11 Minority carrier concentration-Mathematical analysis Lecture 53 Lesson-12 BJT current equations-I Lecture 54 Lesson-13 BJT current equations-II Lecture 55 Lesson-14 BJT emitter current- Mathematical expression Lecture 56 Lesson-15 BJT collector and Base currents-Mathematical analysis Lecture 57 Lesson-16 Emitter efficiency revisited Lecture 58 Lesson-17 Solved example-02 Lecture 59 Lesson-18 Minority carrier distribution-I Lecture 60 Lesson-19 Minority carrier distribution-II Lecture 61 Lesson-20 Generalized current expressions Lecture 62 Lesson-21 Ebers-moll model Lecture 63 Lesson-22 Base width modulation or early effect Lecture 64 Lesson-23 Transistor configurations Lecture 65 Lesson-24 Common base configuration-Input characteristics Lecture 66 Lesson-25 Common base configuration output characteristics Lecture 67 Lesson-26 Common emitter configuration Lecture 68 Lesson-27 CE configuration-Input characteristics Lecture 69 Lesson-28 CE configuration-Output characteristics Lecture 70 Lesson-29 BJT as an amplifier Lecture 71 Lesson-30 Unity gain frequency and transit time Lecture 72 Lesson-31 BJT as a switch Lecture 73 Lesson-32 BJT switching action complete analysis Lecture 74 Lesson-33 Early voltage Lecture 75 Lesson-34 Breakdown mechanisms- punch through Lecture 76 Lesson-35 Breakdown mechanism- Avalanche multiplication Lecture 77 Lesson-36 Solved example-03 Lecture 78 Lesson-37 Solved example-04 Lecture 79 Lesson-38 Undergraduate students in electronics engineering, Communication 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